Characteristics of III-V semiconductor devices at high temperature
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Characteristics of III-V semiconductor devices at high temperature

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Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, D.C.], [Springfield, Va .
Written in English

Subjects:

  • Transistors,
  • Semiconductors,
  • Materials at high temperatures

Book details:

Edition Notes

StatementRainee N. Simons ... [et al.].
SeriesNASA technical memorandum -- 106574.
ContributionsSimons, Rainee N., United States. National Aeronautics and Space Administration.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL17104992M
OCLC/WorldCa31751555

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Since the electronic band structure for each of the nitride materials possesses a direct transition with a band gap energy ranging from eV for InN, to eV for GaN, to eV for AlN at room temperature as well as a fairly high thermal conductivity, the (AlIn)GaN system has been explored in the areas of high-power and high-temperature. CHARACTERISTICS OF III-V SEMICONDUCTOR DEVICES AT HIGH TEMPERATURE Rainee N. Simons NYMA, Inc. Aerospace Parkway Brook Park, Ohio Paul G. Young University of Toledo Department of Electrical Engineering Toledo, Ohio Susan R. Taub and Samuel A. Alterovitz National Aeronautics and Space Administration Lewis Research Center. The devices can be operated up to 80/spl deg/C in pulsed mode and show a high T/sub 0/ value of 84 K up to 35/spl deg/C. In comparison to quantum-well lasers a . Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics P.D. Ye, G.D. Wilk, and M.M. Frank Summary. We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al 2O 3 high-permittivity (high-k) gate dielectric,File Size: KB.

It is hoped that the book will be useful to both beginning and advanced specialists as well as to workers in related fields, thus contributing to the further development of III-V semiconductor devices. Gunma, Japan May SADAO ADACHI vii. Electronics - Electronics - The semiconductor revolution: The invention of the transistor in by John Bardeen, Walter H. Brattain, and William B. Shockley of the Bell research staff provided the first of a series of new devices with remarkable potential for expanding the utility of electronic equipment (see photograph). Transistors, along with such subsequent developments as . IV/IV, III/V, or II/VI combinations) leading to the above “reduced semiconductor notation. Example: Assume a compound semiconductor has 25% “atomic” concentrations of Ga, 25% “atomic” In and 50% “atomic” of N. The chemical formula would be: GaInN But the correct reduced semiconductor formula would be: GaInN. Growth of pure semiconductor crystals Semiconductors can be grown as single crystals with high quality (dislocation densities as low as cm–3) and high purity (impurity concentrations less than ). Czochralski Method Czochralski method is for growing bulk single crystal (erillis-kide) ingots (tanko). Typical growth speed is a File Size: 6MB.

S.J. Pearton, F. Ren, in Encyclopedia of Materials: Science and Technology, Semiconductor devices capable of very high switching speeds (> GHz) are integral components for voice and data transmission systems operating at rates above 5 Gb s − most important semiconductors for high-speed devices are Si/SiGe, GaAs/AlGaAs, . High electron mobility transistor (HEMT) is the futuristic development of the transistor in migration of the nm technology for integration of many devices in a single chip. Moving beyond the silicon‐based devices to reach out the bottlenecks in the scaling and sizing of transistors has become an interesting topic of research. This research area includes the novel approach Author: Ravindiran Munusami, Shankar Prabhakar. Prior to the invention of the bipolar transistor in , semiconductors were used only as two-terminal devices, such as rectifiers and photodiodes. During the early s germanium was the major semiconductor material. However, it proved unsuitable for many applications, because devices made of the material exhibited high leakage currents at only moderately elevated . Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors - Ebook written by Sadao Adachi. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors.